MMBT2222 / MMBT2222a npn silicon epitaxial planar medium power transistor for switching and amplifier applications absolute maximum ratings (t a = 25 o c) value parameter symbol MMBT2222 MMBT2222a unit collector base voltage v cbo 60 75 v collector emitter voltage v ceo 30 40 v emitter base voltage v ebo 5 6 v collector current i c 600 ma total power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c sot-23 plastic package
MMBT2222 / MMBT2222a characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at v ce = 10 v, i c = 0.1 ma at v ce = 10 v, i c = 1 ma at v ce = 10 v, i c = 10 ma at v ce = 1 v, i c = 150 ma at v ce = 10 v, i c = 150 ma at v ce = 10 v, i c = 500 ma MMBT2222 MMBT2222a h fe h fe h fe h fe h fe h fe h fe 35 50 75 50 100 30 40 - - - - 300 - - - - - - - - - collector base voltage at i c = 10 a MMBT2222 MMBT2222a v cbo 60 75 - - v collector emitter voltage at i c = 10 ma MMBT2222 MMBT2222a v ceo 30 40 - - v emitter base voltage at i e = 10 a MMBT2222 MMBT2222a v ebo 5 6 - - v collector base cutoff current at v cb = 50 v at v cb = 60 v MMBT2222 MMBT2222a i cbo - - 100 100 na emitter base cutoff current at v eb = 3 v i ebo - 100 na collector emitter saturation voltage at i c = 150 ma, i b = 15 ma at i c = 500 ma, i b = 50 ma MMBT2222 MMBT2222a MMBT2222 MMBT2222a v ce(sat) - - - - 0.4 0.3 1.6 1 v base emitter saturation voltage at i c = 150 ma, i b = 15 ma at i c = 500 ma, i b = 50 ma MMBT2222 MMBT2222a MMBT2222 MMBT2222a v be(sat) - 0.6 - - 1.3 1.2 2.6 2 v transition frequency at v ce = 20 v, -i e = 20 ma, f = 100 mhz f t 300 - mhz collector output capacitance at v cb = 10 v, f = 100 khz c ob - 8 pf emitter input capacitance at v eb = 0.5 v, f = 100 khz c ib - 25 pf delay time at v cc = 30 v, v be(off) = 0.5 v, i c = 150 ma, i b1 = 15 ma td - 10 ns rise time at v cc = 30 v, v be(off) = 0.5 v, i c = 150 ma, i b1 = 15 ma tr - 25 ns storage time at v cc = 30 v, i c = 150 ma, i b1 = -i b2 = 15 ma tstg - 225 ns fall time at v cc = 30 v, i c = 150 ma, i b1 = -i b2 = 15 ma tf - 60 ns
MMBT2222 / MMBT2222a
MMBT2222 / MMBT2222a
|
